India’s First Silicon Carbide Facility

Why in the News?

India's first silicon carbide manufacturing plant is set to be established in Odisha with an investment of Rs 620 crore.

• The facility, developed by RIR Power Electronics Limited, a key player in semiconductor power electronics, will be located at EMC Park in Infovalley, Bhubaneswar.

Silicon Carbide (SiC)

• It is a compound made of silicon and carbon.
• It has excellent heat conductivity, which makes it ideal for high-temperature applications.
• It is chemically inert and resistant to corrosion by acids, alkalis and salts.
• It has a very high melting point, around 2,730°C (4,950°F).

Acheson process: It is produced by this process where silica (SiO₂) and carbon (usually in the form of petroleum coke) are heated to high temperatures in an electric furnace.

• This process forms SiC crystals and releases carbon dioxide as a by-product.

Uses

• High-temperature semiconductor devices like diodes, MOSFETs (metal-oxide-semiconductor field-effect transistors).
• Abrasive materials such as grinding wheels, sandpapers, cutting tools, and bulletproof vests.
• Electric vehicles (EVs) and hybrid vehicles for power conversion, improving energy efficiency and reducing heat generation.
• Solar power inverters, LEDs and Aerospace components.